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N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220FP STF100N10F7

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см. техническую документацию

915 шт., срок 8 недель

2 120 ֏

Кратность заказа 5 шт.

5 шт. на сумму 10 600 ֏

Альтернативные предложения2

Номенклатурный номер: 8009810877

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Технические параметры

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Resistance	8 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	30 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220FP
Pin Count	3
Series	STripFET H7
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	61 nC @ 10 V
Width	4.6mm
Base Product Number	STF100 ->
Current - Continuous Drain (Id) @ 25В°C	45A (Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	4369pF @ 50V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	8mOhm @ 22.5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4.5V @ 250ВµA
Drain Source On State Resistance	0.0068Ом
Power Dissipation	30Вт
Количество Выводов	3вывод(-ов)
Линейка Продукции	DeepGATE STripFET VII
Максимальная Рабочая Температура	175 C
Монтаж транзистора	Through Hole
Напряжение Измерения Rds(on)	10В
Напряжение Истока-стока Vds	100В
Непрерывный Ток Стока	45А
Полярность Транзистора	N Канал
Пороговое Напряжение Vgs	4.5В
Рассеиваемая Мощность	30Вт
Сопротивление во Включенном Состоянии Rds(on)	0.0068Ом
Стиль Корпуса Транзистора	TO-220FP
Уровень Чувствительности к Влажности (MSL)	MSL 1-Безлимитный
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	15 ns
Id - Continuous Drain Current:	45 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	30 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	61 nC
Rds On - Drain-Source Resistance:	8 mOhms
Rise Time:	40 ns
Series:	STF100N10F7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	27 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	80
Maximum Drain Source Resistance (mOhm)	8@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4.5
Maximum IDSS (uA)	10
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	150000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Packaging	Tube
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	STripFET F7
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220FP
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	15
Typical Gate Charge @ 10V (nC)	56
Typical Gate Charge @ Vgs (nC)	56@10V
Typical Input Capacitance @ Vds (pF)	4369@50V
Typical Rise Time (ns)	40
Typical Turn-Off Delay Time (ns)	46
Typical Turn-On Delay Time (ns)	27
Вес, г	9