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N-Channel MOSFET, 5 A, 650 V, 3-Pin TO-220 STP7N60M2

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см. техническую документацию

5 шт., срок 8 недель

2 380 ֏

Кратность заказа 5 шт.

5 шт. на сумму 11 900 ֏

Альтернативные предложения2

Номенклатурный номер: 8009810906

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

Технические параметры

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	5 A
Maximum Drain Source Resistance	950 mΩ
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	60 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	MDmesh M2
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	8.8 nC @ 10 V
Width	4.6mm
Base Product Number	STP7N60 ->
Current - Continuous Drain (Id) @ 25В°C	5A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	271pF @ 100V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	60W (Tc)
Rds On (Max) @ Id, Vgs	950mOhm @ 2.5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Вес, г	9