N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STB18N60M2

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2870 шт., срок 8 недель

2 120 ֏

Кратность заказа 5 шт.

5 шт. на сумму 10 600 ֏

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Номенклатурный номер: 8009813874

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Trans МОП n-кан 600В 13A 3-Pin(2+Tab) D2PAK T/Ом

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	13 A
Maximum Drain Source Resistance	280 mΩ
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	110 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	MDmesh M2
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	21.5 nC @ 10 V
Width	9.35mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	10.6 ns
Id - Continuous Drain Current:	13 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	21.5 nC
Rds On - Drain-Source Resistance:	255 mOhms
Rise Time:	9 ns
Series:	STB18N60M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	12 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	9