N-Channel MOSFET, 32 A, 650 V, 3-Pin TO-247 STW40N65M2
![Фото 1/3 N-Channel MOSFET, 32 A, 650 V, 3-Pin TO-247 STW40N65M2](https://static.chipdip.ru/lib/770/DOC016770964.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/770/DOC016770971.jpg)
![](https://static.chipdip.ru/lib/517/DOC006517015.jpg)
543 шт., срок 8 недель
6 000 ֏
1 шт.
на сумму 6 000 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.6V |
Maximum Continuous Drain Current | 32 A |
Maximum Drain Source Resistance | 99 mΩ |
Maximum Drain Source Voltage | 650 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 250 W |
Minimum Gate Threshold Voltage | 2V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247 |
Pin Count | 3 |
Series | MDmesh M2 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 56.5 nC @ 10 V |
Width | 5.15mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 600 |
Fall Time: | 12 ns |
Id - Continuous Drain Current: | 32 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 250 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 56.5 nC |
Rds On - Drain-Source Resistance: | 87 mOhms |
Rise Time: | 10 ns |
Series: | STW40N65M2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 96.5 ns |
Typical Turn-On Delay Time: | 15 ns |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 1 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг