STW48N60DM2, Транзистор полевой MOSFET N-канальный 600В 40A 3-Pin(3+Tab) TO-247 туба
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см. техническую документацию
см. техническую документацию
56 шт. с центрального склада, срок 3-4 недели
2 340 ֏
от 5 шт. —
1 980 ֏
от 10 шт. —
1 840 ֏
от 20 шт. —
1 770 ֏
1 шт.
на сумму 2 340 ֏
Альтернативные предложения2
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 600В 40A 3-Pin(3+Tab) TO-247 туба
Технические параметры
| Корпус | TO-247 | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Forward Diode Voltage | 1.6V | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Resistance | 79 mΩ | |
| Maximum Drain Source Voltage | 600 V | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 300 W | |
| Minimum Gate Threshold Voltage | 3V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Series | MDmesh DM2 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Width | 5.15mm | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 600 | |
| Fall Time: | 9.8 ns | |
| Id - Continuous Drain Current: | 40 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-247-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 300 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 70 nC | |
| Rds On - Drain-Source Resistance: | 65 mOhms | |
| Rise Time: | 27 ns | |
| Series: | STW48N60DM2 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | MDmesh | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 131 ns | |
| Typical Turn-On Delay Time: | 27 ns | |
| Vds - Drain-Source Breakdown Voltage: | 600 V | |
| Vgs - Gate-Source Voltage: | -25 V, +25 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Brand | STMicroelectronics | |
| Configuration | Single | |
| Factory Pack Quantity | 600 | |
| Fall Time | 9.8 ns | |
| Id - Continuous Drain Current | 40 A | |
| Manufacturer | STMicroelectronics | |
| Mounting Style | Through Hole | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-247-3 | |
| Pd - Power Dissipation | 300 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 70 nC | |
| Rds On - Drain-Source Resistance | 0.065 Ohms | |
| Rise Time | 27 ns | |
| RoHS | Details | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 131 ns | |
| Typical Turn-On Delay Time | 27 ns | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Vgs - Gate-Source Voltage | 25 V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| Вес, г | 7.33 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 582 КБ
Datasheet STW48N60DM2
pdf, 717 КБ
Datasheet STW48N60DM2
pdf, 719 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 12 августа1 | бесплатно |
| HayPost | 15 августа1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг
