N-Channel MOSFET, 12 A, 600 V, 3-Pin DPAK STD16N60M2
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см. техническую документацию
см. техническую документацию
7430 шт., срок 8 недель
1 500 ֏
Кратность заказа 5 шт.
5 шт.
на сумму 7 500 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.6V |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 320 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 110 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | MDmesh M2 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 18.5 ns |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Rds On - Drain-Source Resistance: | 280 mOhms |
| Rise Time: | 9.5 ns |
| Series: | STD16N60M2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 58 ns |
| Typical Turn-On Delay Time: | 10.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
