STP10NM60N
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см. техническую документацию
см. техническую документацию
2 шт. с центрального склада, срок 2-3 недели
1 650 ֏
от 2 шт. —
1 160 ֏
Добавить в корзину 1 шт.
на сумму 1 650 ֏
Альтернативные предложения1
Описание
Электроэлемент
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP10NM60N)
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 15 ns |
| Id - Continuous Drain Current | 10 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 70 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 19 nC |
| Rds On - Drain-Source Resistance | 550 mOhms |
| Rise Time | 12 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 32 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 25 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Resistance | 550 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 70 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 70 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Rds On - Drain-Source Resistance: | 550 mOhms |
| Rise Time: | 12 ns |
| Series: | STP10NM60N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 3.115 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 557 КБ
Datasheet
pdf, 79 КБ
Datasheet STD10NM60N
pdf, 580 КБ
Datasheet STF10NM60N
pdf, 1072 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 июля1 | бесплатно |
| HayPost | 22 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
