N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STS5NF60L

Изображения служат только для ознакомления,
см. техническую документацию

2480 шт., срок 8 недель

970 ֏

Кратность заказа 10 шт.

10 шт. на сумму 9 700 ֏

Альтернативные предложения2

Номенклатурный номер: 8010794438

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	5 A
Maximum Drain Source Resistance	55 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	DeepGate, STripFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	17 nC @ 5 V
Width	4mm
Continuous Drain Current (Id)	5A
Drain Source On Resistance (RDS(on)@Vgs,Id)	55mΩ@10V, 2.5A
Drain Source Voltage (Vdss)	60V
Gate Threshold Voltage (Vgs(th)@Id)	2.5V@250uA
Input Capacitance (Ciss@Vds)	1.25nF@25V
Power Dissipation (Pd)	2.5W
Total Gate Charge (Qg@Vgs)	17nC@5V
Type	N Channel
Вес, г	5