N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4

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150 шт., срок 8 недель

3 440 ֏

Кратность заказа 5 шт.

5 шт. на сумму 17 200 ֏

Альтернативные предложения1

Номенклатурный номер: 8011053556

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Resistance	35 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	100 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	38 nC @ 5 V
Width	6.2mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	20 ns
Forward Transconductance - Min:	24 S
Id - Continuous Drain Current:	25 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	100 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	52 nC
Rds On - Drain-Source Resistance:	30 mOhms
Rise Time:	40 ns
Series:	STD25NF10L
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-16 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	5