STS1NK60Z транзистор: N-MOSFET 600V 0.3A 15 Om
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см. техническую документацию
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32500 шт. с центрального склада, срок 2-3 недели
18 ֏
Кратность заказа 2500 шт.
2500 шт.
на сумму 45 000 ֏
Альтернативные предложения3
Описание
транзистор: N-MOSFET 600V 0.3A <15 Om
корпус: SO8
корпус: SO8
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single Quad Drain |
Factory Pack Quantity | 2500 |
Fall Time | 28 ns |
Height | 1.65 mm |
Id - Continuous Drain Current | 250 mA |
Length | 5 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOIC-8 |
Packaging | Reel |
Pd - Power Dissipation | 2 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 15 Ohms |
Rise Time | 5 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 13 ns |
Typical Turn-On Delay Time | 5.5 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 4 mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 28 ns |
Id - Continuous Drain Current: | 250 mA |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOIC-8 |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 6.9 nC |
Rds On - Drain-Source Resistance: | 15 Ohms |
Rise Time: | 5 ns |
Series: | STS1NK60Z |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 13 ns |
Typical Turn-On Delay Time: | 5.5 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.25 |
Maximum Drain Source Resistance (mOhm) | 15000@10V |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Standard Package Name | SO |
Supplier Package | SO N |
Supplier Temperature Grade | Industrial |
Typical Fall Time (ns) | 28 |
Typical Gate Charge @ 10V (nC) | 4.9 |
Typical Gate Charge @ Vgs (nC) | 4.9@10V |
Typical Input Capacitance @ Vds (pF) | 94@25V |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 13 |
Typical Turn-On Delay Time (ns) | 5.5 |
Вес, г | 2.3 |
Техническая документация
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