STP100NF04, Транзистор полевой MOSFET N-канальный 40В 120A

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119 шт. с центрального склада, срок 3 недели

710 ֏

Мин. кол-во для заказа 3 шт.

от 10 шт. — 620 ֏

от 19 шт. — 590 ֏

от 37 шт. — 560 ֏

3 шт. на сумму 2 130 ֏

Альтернативные предложения2

Номенклатурный номер: 8013156465

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой MOSFET N-канальный 40В 120A

Корпус	TO-220AB
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	120
Maximum Drain Source Resistance (mOhm)	4.6@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	300000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	Unknown
Process Technology	STripFET II
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	50
Typical Gate Charge @ 10V (nC)	110
Typical Gate Charge @ Vgs (nC)	110@10V
Typical Input Capacitance @ Vds (pF)	5100@25V
Typical Rise Time (ns)	220
Typical Turn-Off Delay Time (ns)	80
Typical Turn-On Delay Time (ns)	35
Current - Continuous Drain (Id) @ 25В°C	120A(Tc)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-220-3
Power Dissipation (Max)	300W(Tc)
Rds On (Max) @ Id, Vgs	4.6mOhm @ 50A, 10V
Series	Automotive, AEC-Q101, STripFETв(ў II
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Вес, г	3.5