KSP2222ATA NPN Transistor, 600 mA, 40 V, 3-Pin TO-92
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см. техническую документацию
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97 ֏
Кратность заказа 2000 шт.
2000 шт.
на сумму 194 000 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Bipolar Transistors
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs.
Технические параметры
Maximum Collector Base Voltage | 75 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum DC Collector Current | 600 mA |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 625 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-92 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Current - Collector Cutoff (Max) | 10nA(ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Family | Transistors-Bipolar(BJT)-Single |
Frequency - Transition | 300MHz |
Manufacturer | Fairchild Semiconductor |
Operating Temperature | 150°C(TJ) |
Package / Case | TO-226-3, TO-92-3(TO-226AA)(Formed Leads) |
Packaging | Tape & Box(TB) |
Part Status | Active |
Power - Max | 625mW |
Series | - |
Standard Package | 2 |
Supplier Device Package | TO-92-3 |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Вес, г | 1 |