N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220 STP9NK60Z
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см. техническую документацию
см. техническую документацию
1950 шт., срок 8 недель
3 130 ֏
Кратность заказа 50 шт.
50 шт.
на сумму 156 500 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор N-МОП, полевой, 600В, 4,4А, 125Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Resistance | 950 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 125 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Width | 4.6mm |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Process Technology | SuperMESH |
| Configuration | Single |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Continuous Drain Current (A) | 7 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 950@10V |
| Typical Gate Charge @ Vgs (nC) | 38@10V |
| Typical Gate Charge @ 10V (nC) | 38 |
| Typical Input Capacitance @ Vds (pF) | 1110@25V |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 17 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Typical Turn-On Delay Time (ns) | 19 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tube |
| Automotive | No |
| Supplier Package | TO-220 |
| Standard Package Name | TO-220 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Length | 10.4(Max) |
| Package Width | 4.6(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Through Hole |
| Base Product Number | STP9NK60 -> |
| Current - Continuous Drain (Id) @ 25В°C | 7A (Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 100ВµA |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Fall Time | 15 ns |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 7 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 125 W |
| Qg - Gate Charge | 38 nC |
| Rds On - Drain-Source Resistance | 950 mOhms |
| Rise Time | 17 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 43 ns |
| Typical Turn-On Delay Time | 19 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 30 V |
Техническая документация
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