N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1

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4125 шт., срок 8 недель

1 020 ֏

Кратность заказа 75 шт.

75 шт. на сумму 76 500 ֏

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Номенклатурный номер: 8014494133

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Транзистор: N-MOSFET, полевой, 600В, 0,63А, 30Вт, I2PAK Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	1 A
Maximum Drain Source Resistance	8.5 Ω
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	3.7V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	30 W
Minimum Gate Threshold Voltage	2.25V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	IPAK(TO-251)
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	7 nC @ 10 V
Width	6.2mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	25 ns
Forward Transconductance - Min:	1 S
Id - Continuous Drain Current:	1 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-251-3
Packaging:	Tube
Pd - Power Dissipation:	3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7 nC
Rds On - Drain-Source Resistance:	8 Ohms
Rise Time:	5 ns
Series:	STQ1HNK60R
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	6.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	2.25 V
Вес, г	1