STD11N60DM2, MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
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Описание
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MDmesh™ DM2 Power MOSFETsSTMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q rr, t rr ) and shows 20% lower R DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 9.5 ns |
Id - Continuous Drain Current: | 10 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 110 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 16.5 nC |
Rds On - Drain-Source Resistance: | 370 mOhms |
Rise Time: | 6.3 ns |
Series: | STD11N60DM2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 31 ns |
Typical Turn-On Delay Time: | 11.7 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.6V |
Maximum Continuous Drain Current | 10 A |
Maximum Drain Source Resistance | 420 mΩ |
Maximum Gate Source Voltage | ±25 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 110 W |
Minimum Gate Threshold Voltage | 4V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 16.5 nC @ 10 V |
Width | 6.2mm |
Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 520 КБ
Datasheet STD11N60DM2
pdf, 816 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
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2 для посылок массой до 1 кг