N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6
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см. техническую документацию
см. техническую документацию
295 шт., срок 8 недель
6 300 ֏
Кратность заказа 5 шт.
5 шт.
на сумму 31 500 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.6V |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Resistance | 215 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | ±25 V |
| Maximum Gate Threshold Voltage | 4.75V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 110 W |
| Minimum Gate Threshold Voltage | 3.25V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerFLAT 8x8 HV |
| Pin Count | 5 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Width | 8.1mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerFLAT-8x8-5 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Rds On - Drain-Source Resistance: | 215 mOhms |
| Rise Time: | 11 ns |
| Series: | STx26 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 39 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.25 V |
| Вес, г | 1 |
Техническая документация
Datasheet STL26N60DM6
pdf, 340 КБ
Datasheet STL26N60DM6
pdf, 569 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
