N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6

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72 шт., срок 8 недель

6 500 ֏

Кратность заказа 2 шт.

2 шт. на сумму 13 000 ֏

Альтернативные предложения1

Номенклатурный номер: 8014519753

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Транзистор: N-MOSFET, MDmesh™ DM6, полевой, 600В, 11А, Idm: 60А Характеристики

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.6V
Maximum Continuous Drain Current	15 A
Maximum Drain Source Resistance	195 mΩ
Maximum Gate Source Voltage	±25 V
Maximum Gate Threshold Voltage	4.75V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	110 W
Minimum Gate Threshold Voltage	3.25V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	24 nC @ 10 V
Width	4.6mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	8 ns
Id - Continuous Drain Current:	18 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	130 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	24 nC
Rds On - Drain-Source Resistance:	195 mOhms
Rise Time:	11 ns
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Вес, г	1