SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STWA70N65DM6

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21 100 ֏

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Номенклатурный номер: 8014533506

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Транзистор: N-MOSFET, MDmesh™ DM6, полевой, 650В, 43А, Idm: 260А Характеристики

Channel Mode	Depletion
Channel Type	N
Maximum Continuous Drain Current	68 A
Maximum Drain Source Resistance	0.036 Ω
Maximum Drain Source Voltage	650 V
Maximum Gate Threshold Voltage	4.75V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Series	ST
Transistor Material	SiC
Base Product Number	STWA70 ->
Current - Continuous Drain (Id) @ 25В°C	68A (Tc)
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 100V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	450W (Tc)
Rds On (Max) @ Id, Vgs	40mOhm @ 34A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-247 Long Leads
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	4.75V @ 250ВµA
Вес, г	1