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N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP150N10F7AG

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852 шт., срок 7 недель

6 300 ֏

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Добавить в корзину 2 шт. на сумму 12 600 ֏

Альтернативные предложения2

Номенклатурный номер: 8014579664

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Технические параметры

Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	100 V
Mounting Type	Through Hole
Package Type	TO-220
Pin Count	3
Automotive	Yes
Channel Mode	Enhancement
Configuration	Single
ECCN (US)	EAR99
Maximum Continuous Drain Current (A)	110
Maximum Drain Source Resistance (mOhm)	4.2@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	250000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 175
Packaging	Tube
Part Status	Active
PCB changed	3
PPAP	Unknown
Process Technology	STripFET F7
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220
Supplier Temperature Grade	Automotive
Tab	Tab
Typical Fall Time (ns)	33
Typical Gate Charge @ 10V (nC)	127
Typical Gate Charge @ Vgs (nC)	127@10V
Typical Input Capacitance @ Vds (pF)	9000@50V
Typical Rise Time (ns)	54
Typical Turn-Off Delay Time (ns)	68
Typical Turn-On Delay Time (ns)	37
Вес, г	1