N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6

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150 шт., срок 8 недель

7 400 ֏

Кратность заказа 50 шт.

50 шт. на сумму 370 000 ֏

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Номенклатурный номер: 8014599262

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Resistance	3 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	300 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	DeepGate, STripFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	183 nC @ 10 V
Width	4.6mm
Base Part Number	STP260
Current - Continuous Drain (Id) @ 25В°C	120A(Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	183nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	11400pF @ 25V
Manufacturer	STMicroelectronics
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	300W(Tc)
Rds On (Max) @ Id, Vgs	3mOhm @ 60A, 10V
Supplier Device Package	TO-220
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Вес, г	1