STF20N65M5
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см. техническую документацию
см. техническую документацию
1 шт. с центрального склада, срок 3-4 недели
6 900 ֏
1 шт.
на сумму 6 900 ֏
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, N-CH, 650V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 18A(Tc) |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1345pF @ 100V |
Manufacturer | STMicroelectronics |
Mounting Type | Through Hole |
Operating Temperature | 150В°C(TJ) |
Package / Case | TO-220-3 Full Pack |
Packaging | Tube |
Part Status | Active |
Power Dissipation (Max) | 30W(Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
Series | MDmeshв(ў V |
Standard Package | 50 |
Supplier Device Package | TO-220FP |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±25V |
Vgs(th) (Max) @ Id | 5V @ 250ВµA |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 7.5 ns |
Id - Continuous Drain Current: | 18 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 130 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 36 nC |
Rds On - Drain-Source Resistance: | 190 mOhms |
Rise Time: | 7.5 ns |
Series: | Mdmesh M5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Resistance | 190 mΩ |
Maximum Drain Source Voltage | 710 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 30 W |
Minimum Gate Threshold Voltage | 3V |
Number of Elements per Chip | 1 |
Package Type | TO-220FP |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 36 nC @ 10 V |
Width | 4.6mm |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 858 КБ
Datasheet
pdf, 1171 КБ
STF20N65M5
pdf, 858 КБ
Документация
pdf, 808 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 августа1 | бесплатно |
HayPost | 14 августа1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг