STP23N80K5, Транзистор: N-MOSFET

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50 шт., срок 7-8 недель

4 630 ֏

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Номенклатурный номер: 8015749766

800V 16A 280mΩ@8A,10V 190W 5V@100uA null TO-220 MOSFETs ROHS

Continuous Drain Current (Id)	16A
Drain Source On Resistance (RDS(on)@Vgs,Id)	280mΩ@8A, 10V
Drain Source Voltage (Vdss)	800V
Gate Threshold Voltage (Vgs(th)@Id)	5V@100uA
Input Capacitance (Ciss@Vds)	1nF@100V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	190W
Reverse Transfer Capacitance (Crss@Vds)	-
Total Gate Charge (Qg@Vgs)	33nC@10V
Type	null
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1000
Fall Time:	9 ns
Id - Continuous Drain Current:	16 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	190 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	33 nC
Rds On - Drain-Source Resistance:	280 mOhms
Rise Time:	9 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	14 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	2