STB12NM50T4, 550V 12A 160W 350m-@10V,6A 5V@50uA N Channel TO-263-3(D2PAK) MOSFETs

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495 шт., срок 5-6 недель

3 480 ֏

от 10 шт. — 2 420 ֏

от 30 шт. — 2 070 ֏

от 100 шт. — 1 840 ֏

1 шт. на сумму 3 480 ֏

Номенклатурный номер: 8015774862

550V 12A 160W 350mΩ@10V,6A 5V@50uA N Channel TO-263 MOSFETs ROHS

Continuous Drain Current (Id)	12A
Drain Source On Resistance (RDS(on)@Vgs,Id)	350mΩ@10V, 6A
Drain Source Voltage (Vdss)	550V
Gate Threshold Voltage (Vgs(th)@Id)	5V@50uA
Input Capacitance (Ciss@Vds)	1nF@25V
Operating Temperature	-65℃~+150℃@(Tj)
Power Dissipation (Pd)	160W
Total Gate Charge (Qg@Vgs)	39nC@10V
Type	N Channel
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.5V
Maximum Continuous Drain Current	12 A
Maximum Drain Source Resistance	350 mΩ
Maximum Gate Source Voltage	±30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	160 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-65 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	28 nC @ 10 V
Width	9.35mm
Вес, г	1.96