STD11N60DM2, TO-252-3 MOSFETs ROHS
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см. техническую документацию
см. техническую документацию
2500 шт., срок 5-6 недель
2 690 ֏
от 10 шт. —
1 900 ֏
от 30 шт. —
1 720 ֏
от 100 шт. —
1 200 ֏
1 шт.
на сумму 2 690 ֏
Альтернативные предложения1
Описание
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.6V |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Resistance | 420 mΩ |
| Maximum Gate Source Voltage | ±25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 110 W |
| Minimum Gate Threshold Voltage | 4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 9.5 ns |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16.5 nC |
| Rds On - Drain-Source Resistance: | 370 mOhms |
| Rise Time: | 6.3 ns |
| Series: | STD11N60DM2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 31 ns |
| Typical Turn-On Delay Time: | 11.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 520 КБ
Datasheet STD11N60DM2
pdf, 816 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 25 августа1 | бесплатно |
| HayPost | 28 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
