N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3

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20000 шт., срок 8 недель

1 680 ֏

Кратность заказа 2500 шт.

2500 шт. на сумму 4 200 000 ֏

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Номенклатурный номер: 8016445299

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	8.5 mΩ
Maximum Drain Source Voltage	55 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	110 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	STripFET F3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	33.5 nC @ 10 V
Width	6.2mm
Transistor Polarity	N Channel; Continuous Drain Current Id
Вес, г	1