STD60NF55LT4, Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) DPAK T/R

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5000 шт., срок 8-10 недель

930 ֏

Кратность заказа 2500 шт.

2500 шт. на сумму 2 325 000 ֏

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Номенклатурный номер: 8017336538

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор N-MOSFET, полевой, 55В, 42А, 110Вт, DPAK Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	35 ns
Forward Transconductance - Min:	35 S
Id - Continuous Drain Current:	60 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	56 nC
Rds On - Drain-Source Resistance:	14 mOhms
Rise Time:	180 ns
Series:	STD60NF55L
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	55 V
Vgs - Gate-Source Voltage:	-15 V, +15 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Case	DPAK
Drain current	42A
Drain-source voltage	55V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±15V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	STMicroelectronics
Mounting	SMD
On-state resistance	17mΩ
Polarisation	unipolar
Power dissipation	110W
Technology	SuperMesh™
Type of transistor	N-MOSFET
Вес, г	1