STGW40H65DFB, 283W -55-~+175-@(Tj) 80A 650V Trench Field Stop 160A 0.363mJ 0.498mJ TO-247-3 IGBTs ROHS
![STGW40H65DFB, 283W -55-~+175-@(Tj) 80A 650V Trench Field Stop 160A 0.363mJ 0.498mJ TO-247-3 IGBTs ROHS](https://static.chipdip.ru/lib/170/DOC043170757.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
86 шт., срок 7-8 недель
6 600 ֏
от 10 шт. —
5 300 ֏
от 30 шт. —
4 420 ֏
Добавить в корзину 1 шт.
на сумму 6 600 ֏
Альтернативные предложения1
Описание
Latest Technologies in Power MOSFET and IGBT STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.8 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Continuous Collector Current Ic Max: | 40 A |
Factory Pack Quantity: | 600 |
Gate-Emitter Leakage Current: | 250 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 283 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 6.852 |
Техническая документация
Datasheet
pdf, 484 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг