STF16N65M5, Транзистор N-МОП, полевой, 650В, 7,3А, 90Вт, TO220FP

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46 шт., срок 7-8 недель

2 890 ֏

от 10 шт. — 2 050 ֏

от 30 шт. — 1 840 ֏

Добавить в корзину 1 шт. на сумму 2 890 ֏

Альтернативные предложения3

Номенклатурный номер: 8020311216

Описание Транзистор N-МОП, полевой, 650В, 7,3А, 90Вт, TO220FP Характеристики

Continuous Drain Current (Id)	12A
Drain Source On Resistance (RDS(on)@Vgs,Id)	299mΩ@6A, 10V
Drain Source Voltage (Vdss)	650V
Gate Threshold Voltage (Vgs(th)@Id)	5V@250uA
Input Capacitance (Ciss@Vds)	1.25nF@100V
Power Dissipation (Pd)	25W
Total Gate Charge (Qg@Vgs)	45nC@10V
Type	null
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	7 ns
Height	9.3 mm
Id - Continuous Drain Current	12 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	25 W
Product Category	MOSFET
Qg - Gate Charge	31 nC
Rds On - Drain-Source Resistance	279 mOhms
Rise Time	9 ns
RoHS	Details
Series	MDmesh M5
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	4.6 mm
Вес, г	1.67