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N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

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см. техническую документацию

2000 шт., срок 8 недель

7 800 ֏

Кратность заказа 1000 шт.

1000 шт. на сумму 7 800 000 ֏

Альтернативные предложения2

Номенклатурный номер: 8020327158

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout.

Технические параметры

Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.6V
Maximum Continuous Drain Current	7 A
Maximum Drain Source Resistance	630 mΩ
Maximum Gate Source Voltage	±25 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	70 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	15 nC @ 10 V
Width	9.35mm
AEC Qualified Number	AEC-Q101
Automotive	Yes
Maximum Continuous Drain Current - (A)	5.5
Maximum Drain Source Resistance - (mOhm)	0.63@10V
Maximum Drain Source Voltage - (V)	650
Maximum Gate Source Voltage - (V)	??25
Maximum Gate Threshold Voltage - (V)	5
Maximum Power Dissipation - (mW)	250000
Military	No
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Process Technology	MDmesh M5
Standard Package Name	TO-263
Supplier Package	D2PAK
Typical Gate Charge @ 10V - (nC)	100
Typical Gate Charge @ Vgs - (nC)	100@10V
Typical Input Capacitance @ Vds - (pF)	4400@100V
Вес, г	1