N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STH310N10F7-2

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Номенклатурный номер: 8020757493

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Resistance	2.3 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	315 W
Minimum Gate Threshold Voltage	2.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	H2PAK-2
Pin Count	3
Series	STripFET H7
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	180 nC @ 10 V
Width	10.4mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	40 ns
Id - Continuous Drain Current:	180 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	H2PAK-2
Pd - Power Dissipation:	315 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	180 nC
Rds On - Drain-Source Resistance:	2.5 mOhms
Rise Time:	108 ns
Series:	STH310N10F7-2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	148 ns
Typical Turn-On Delay Time:	62 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Вес, г	1