STD35NF06LT4, Trans MOSFET N-CH 60V 35A Automotive 3-Pin(2+Tab) DPAK T/R

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15000 шт., срок 8-10 недель

840 ֏

Кратность заказа 2500 шт.

2500 шт. на сумму 2 100 000 ֏

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Номенклатурный номер: 8021277689

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор N-MOSFET, STripFET™ F7, полевой, 60В, 35А, 80Вт, DPAK Характеристики

кол-во в упаковке	2500
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Resistance	17 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-15 V, +15 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	80 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	25 nC @ 4.5 V
Width	6.2mm
Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	2500
Fall Time	20 ns
Forward Transconductance - Min	28 S
Height	2.4 mm
Id - Continuous Drain Current	35 A
Length	6.6 mm
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Cut Tape
Pd - Power Dissipation	80 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	16 mOhms
Rise Time	100 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	20 ns
Unit Weight	0.139332 oz
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	16 V
Вес, г	1