Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STP80N600K6, MOSFET N-channel 800 V ...

STP80N600K6, MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

2002 шт., срок 6-9 недель

3 120 ֏

от 10 шт. — 2 450 ֏

от 100 шт. — 1 840 ֏

от 250 шт. — 1 590 ֏

Добавить в корзину 1 шт. на сумму 3 120 ֏

Номенклатурный номер: 8021421027

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

STP80N600K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology. This K6 technology is based on 20 years of STMicroelectronics experience in super junction technology. The result of this technology allows the STMicro STP80N600K6 to feature best-in-class on-resistance per area and gate charge for applications demanding superior power density and high efficiency.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	12.6 ns
Id - Continuous Drain Current:	7 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220
Packaging:	Tube
Pd - Power Dissipation:	86 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	10.7 nC
Rds On - Drain-Source Resistance:	600 mOhms
Rise Time:	4.1 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28.2 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1.9