STP42N65M5, Транзистор N-МОП, полевой, 650В, 20,8А, 190Вт, TO220-3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
27 шт., срок 8 недель
15 600 ֏
от 3 шт. —
12 400 ֏
от 10 шт. —
10 000 ֏
Добавить в корзину 1 шт.
на сумму 15 600 ֏
Альтернативные предложения1
Описание
Описание Транзистор N-МОП, полевой, 650В, 20,8А, 190Вт, TO220-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 33A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650pF @ 100V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 190W(Tc) |
| Rds On (Max) @ Id, Vgs | 79 mOhm @ 16.5A, 10V |
| Series | MDmeshв(ў V |
| Standard Package | 50 |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±25V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Resistance | 79 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 190 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 13 ns |
| Id - Continuous Drain Current: | 33 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 190 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 98 nC |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Rise Time: | 24 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFETs |
| Typical Turn-Off Delay Time: | 65 ns |
| Typical Turn-On Delay Time: | 61 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 1095 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 972 КБ
Datasheet STW42N65M5
pdf, 1095 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
