FGH75T65SHD-F155
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Описание
FGH75T65SHD Field Stop Trench IGBT
onsemi FGH75T65SHD Field Stop Trench IGBT offers optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. The FGH75T65SHD features high current capability, high input impedance, and fast switching. The IGBT also offers positive temperature co-efficient for easy parallel operating.
onsemi FGH75T65SHD Field Stop Trench IGBT offers optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. The FGH75T65SHD features high current capability, high input impedance, and fast switching. The IGBT also offers positive temperature co-efficient for easy parallel operating.
Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 150 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FGH75T65SHD_F155 |
| Pd - Power Dissipation: | 455 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | FGH75T65SHD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 6.39 |
Техническая документация
Datasheet
pdf, 1253 КБ
