STP110N8F6
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см. техническую документацию
см. техническую документацию
8684 шт., срок 8-10 недель
760 ֏
Мин. кол-во для заказа 3 шт.
от 10 шт. —
630 ֏
от 50 шт. —
520 ֏
от 100 шт. —
441 ֏
Добавить в корзину 3 шт.
на сумму 2 280 ֏
Альтернативные предложения3
Описание
Описание Транзистор MOSFETs 80V 110A 6.5m-@10V,55A 200W 4
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 48 ns |
| Id - Continuous Drain Current | 110 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Pd - Power Dissipation | 200 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 150 nC |
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| Rise Time | 61 ns |
| Series | STP110N8F6 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | STripFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time | 162 ns |
| Typical Turn-On Delay Time | 24 ns |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 110 |
| Maximum Drain Source Resistance (mOhm) | 6.5@10V |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 200000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | STripFET F6 |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 48 |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Gate Charge @ Vgs (nC) | 150@10V |
| Typical Input Capacitance @ Vds (pF) | 9130@40V |
| Typical Rise Time (ns) | 61 |
| Typical Turn-Off Delay Time (ns) | 162 |
| Typical Turn-On Delay Time (ns) | 24 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 48 ns |
| Id - Continuous Drain Current: | 110 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 200 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 150 nC |
| Rds On - Drain-Source Resistance: | 6.5 mOhms |
| Rise Time: | 61 ns |
| Series: | STP110N8F6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 162 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 2.5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 4 сентября1 | бесплатно |
| HayPost | 8 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
