STP17NK40ZFP
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1100 шт. с центрального склада, срок 3 недели
240 ֏
Кратность заказа 50 шт.
Добавить в корзину 50 шт.
на сумму 12 000 ֏
Альтернативные предложения2
Описание
Транзисторы полевые
Описание Транзистор: N-MOSFET, полевой, 400В, 9,4А, 35Вт, TO220FP Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 35 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Rise Time: | 23 ns |
| Series: | STP17NK40ZFP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Height | 9.3 mm |
| Id - Continuous Drain Current | 15 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 35 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 23 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.6 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Resistance | 250 mΩ |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 35 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Вес, г | 3.32 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 396 КБ
Datasheet
pdf, 920 КБ
Datasheet STP17NK40ZFP
pdf, 397 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 24 июля1 | бесплатно |
| HayPost | 28 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
