STP20N95K5, Транзистор N-МОП, полевой, 950В 17,5A 250Вт 0,33Ом TO220
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92 шт., срок 8 недель
8 700 ֏
от 3 шт. —
6 900 ֏
от 10 шт. —
5 800 ֏
от 50 шт. —
4 970 ֏
Добавить в корзину 1 шт.
на сумму 8 700 ֏
Альтернативные предложения1
Описание
Описание Транзистор N-МОП, полевой, 950В 17,5A 250Вт 0,33Ом TO220 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 17.5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Rds On - Drain-Source Resistance: | 330 mOhms |
| Series: | STP20N95K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 950 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 17.5 |
| Maximum Drain Source Resistance (mOhm) | 330@10V |
| Maximum Drain Source Voltage (V) | 950 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 18 |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
| Typical Input Capacitance @ Vds (pF) | 1550@100V |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Typical Turn-On Delay Time (ns) | 18 |
| Forward Diode Voltage | 1.5V |
| Maximum Continuous Drain Current | 17.5 A |
| Maximum Drain Source Resistance | 330 mΩ |
| Maximum Drain Source Voltage | 950 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 250 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Width | 4.6mm |
| Вес, г | 2.05 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 916 КБ
Datasheet
pdf, 952 КБ
Datasheet STW20N95K5
pdf, 1458 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
