N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 STP80NF55-06

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1200 шт., срок 8 недель

3 790 ֏

Кратность заказа 50 шт.

50 шт. на сумму 189 500 ֏

Альтернативные предложения4

Номенклатурный номер: 8025665909

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	7 mΩ
Maximum Drain Source Voltage	55 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	300 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	142 nC @ 10 V
Width	4.6mm
RoHS Compliant	Yes
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	80
Maximum Drain Source Resistance (mOhm)	6.5@10V
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	300000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Packaging	Tube
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	STripFET II
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	65
Typical Gate Charge @ 10V (nC)	142
Typical Gate Charge @ Vgs (nC)	142@10V
Typical Input Capacitance @ Vds (pF)	4400@25V
Typical Rise Time (ns)	155
Typical Turn-Off Delay Time (ns)	125
Typical Turn-On Delay Time (ns)	27
Вес, г	1