N-Channel MOSFET, 7.5 A, 60 V, 8-Pin SO-8 STS7NF60L

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8820 шт., срок 8 недель

2 820 ֏

Кратность заказа 10 шт.

10 шт. на сумму 28 200 ֏

Альтернативные предложения2

Номенклатурный номер: 8027050368

Semiconductors\Discrete Semiconductors\MOSFETs

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	7.5 A
Maximum Drain Source Resistance	21 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	±16 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SO-8
Pin Count	8
Transistor Configuration	Single
Typical Gate Charge @ Vgs	25 nC @ 4.5 V
Width	4mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	20 ns
Forward Transconductance - Min:	13 S
Id - Continuous Drain Current:	7.5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOIC-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	25 nC
Rds On - Drain-Source Resistance:	19.5 mOhms
Rise Time:	27 ns
Series:	STS7NF60L
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V