P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STS10P4LLF6

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4940 шт., срок 8 недель

1 320 ֏

Кратность заказа 10 шт.

10 шт. на сумму 13 200 ֏

Альтернативные предложения2

Номенклатурный номер: 8030794742

Semiconductors\Discrete Semiconductors\MOSFETs

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

Channel Mode	Enhancement
Channel Type	P
Forward Diode Voltage	1.1V
Maximum Continuous Drain Current	10 A
Maximum Drain Source Resistance	20 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.7 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	STripFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	34 nC @ 4.5 V
Width	4mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	20 ns
Id - Continuous Drain Current:	10 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Pd - Power Dissipation:	2.7 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	34 nC
Rds On - Drain-Source Resistance:	12.5 mOhms
Rise Time:	60.6 ns
Series:	STS10P4LLF6
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	49.4 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V