N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-247 STW5NK100Z

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1170 шт., срок 8 недель

5 100 ֏

Кратность заказа 30 шт.

30 шт. на сумму 153 000 ֏

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Номенклатурный номер: 8031884822

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Транзистор N-МОП, полевой, 1кВ, 2,2А, 125Вт, TO247-3 Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	3.5 A
Maximum Drain Source Resistance	3.7 Ω
Maximum Drain Source Voltage	1000 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	42 nC @ 10 V
Width	5.15mm
Case	TO247
Drain current	2.2A
Drain-source voltage	1kV
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	STMicroelectronics
Mounting	THT
On-state resistance	3.7Ω
Polarisation	unipolar
Power dissipation	125W
Technology	SuperMESH3™
Type of transistor	N-MOSFET
Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	600
Fall Time	19 ns
Forward Transconductance - Min	4 S
Height	20.15 mm
Id - Continuous Drain Current	3.5 A
Length	15.75 mm
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	125 W
Product Category	MOSFET
Qg - Gate Charge	42 nC
Rds On - Drain-Source Resistance	2.7 Ohms
Rise Time	7.7 ns
RoHS	Details
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	51.5 ns
Typical Turn-On Delay Time	22.5 ns
Vds - Drain-Source Breakdown Voltage	1000 V
Vgs - Gate-Source Voltage	30 V