N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FP STF12N60M2
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см. техническую документацию
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1900 шт., срок 8 недель
1 900 ֏
Кратность заказа 50 шт.
50 шт.
на сумму 95 000 ֏
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.6V |
Maximum Continuous Drain Current | 9 A |
Maximum Drain Source Resistance | 450 mΩ |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 25 W |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220FP |
Pin Count | 3 |
Series | MDmesh M2 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 16 nC @ 10 V |
Width | 4.6mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 18 ns |
Id - Continuous Drain Current: | 9 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Pd - Power Dissipation: | 25 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | Power MOSFETs |
Qg - Gate Charge: | 16 nC |
Rds On - Drain-Source Resistance: | 450 mOhms |
Rise Time: | 9.2 ns |
Series: | STF12N60M2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MDmesh M2 |
Typical Turn-Off Delay Time: | 56 ns |
Typical Turn-On Delay Time: | 9.2 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Brand | STMicroelectronics |
Factory Pack Quantity | 1000 |
Fall Time | 18 ns |
Height | 4.6 mm |
Id - Continuous Drain Current | 9 A |
Length | 16.4 mm |
Manufacturer | STMicroelectronics |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Pd - Power Dissipation | 25 W |
Product | Power MOSFET |
Product Category | MOSFET |
Qg - Gate Charge | 16 nC |
Rds On - Drain-Source Resistance | 450 mOhms |
Rise Time | 9.2 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MDmesh M2 |
Typical Turn-Off Delay Time | 56 ns |
Typical Turn-On Delay Time | 9.2 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 25 V |
Vgs th - Gate-Source Threshold Voltage | 2 V to 4 V |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
HayPost | 15 сентября1 | 1 650 ֏2 |
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