N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

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480 шт., срок 8 недель

7 100 ֏

Кратность заказа 30 шт.

30 шт. на сумму 213 000 ֏

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Номенклатурный номер: 8032971218

Semiconductors\Discrete Semiconductors\MOSFETs

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	8.3 A
Maximum Drain Source Resistance	1.38 Ω
Maximum Drain Source Voltage	1000 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	230 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	113 nC @ 10 V
Width	5.15mm
Case	TO247
Drain current	8.3A
Drain-source voltage	1kV
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	STMicroelectronics
Mounting	THT
On-state resistance	1.38Ω
Polarisation	unipolar
Power dissipation	230W
Technology	MDmesh™
Type of transistor	N-MOSFET