STP18NM80, Транзистор полевой MOSFET N-канальный 800В 17А 190Вт
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см. техническую документацию
см. техническую документацию
486 шт. с центрального склада, срок 3 недели
2 950 ֏
от 9 шт. —
2 510 ֏
от 18 шт. —
2 320 ֏
от 36 шт. —
2 290 ֏
1 шт.
на сумму 2 950 ֏
Альтернативные предложения1
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 800В 17А 190Вт
Технические параметры
| Корпус | to-220 | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Through Hole | |
| Maximum Continuous Drain Current (A) | 17 | |
| Maximum Drain Source Resistance (mOhm) | 295@10V | |
| Maximum Drain Source Voltage (V) | 800 | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 190000 | |
| Minimum Operating Temperature (°C) | -65 | |
| Mounting | Through Hole | |
| Number of Elements per Chip | 1 | |
| Packaging | Tube | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | MDmesh | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO | |
| Supplier Package | TO-220AB | |
| Supplier Temperature Grade | Industrial | |
| Tab | Tab | |
| Typical Fall Time (ns) | 50 | |
| Typical Gate Charge @ 10V (nC) | 70 | |
| Typical Gate Charge @ Vgs (nC) | 70@10V | |
| Typical Input Capacitance @ Vds (pF) | 2070@50V | |
| Typical Rise Time (ns) | 28 | |
| Typical Turn-Off Delay Time (ns) | 96 | |
| Typical Turn-On Delay Time (ns) | 18 | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: | 1000 | |
| Fall Time: | 50 ns | |
| Id - Continuous Drain Current: | 17 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -65 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package/Case: | TO-220-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 190 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 70 nC | |
| Rds On - Drain-Source Resistance: | 295 mOhms | |
| Rise Time: | 28 ns | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 96 ns | |
| Typical Turn-On Delay Time: | 18 ns | |
| Vds - Drain-Source Breakdown Voltage: | 800 V | |
| Vgs - Gate-Source Voltage: | -30 V, +30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Вес, г | 3.5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 9 августа1 | бесплатно |
| HayPost | 13 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
