STGW80H65DFB, Биполярный транзистор IGBT, 650 В, 120 А, 469Вт

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45 шт. с центрального склада, срок 3 недели

2 760 ֏

от 5 шт. — 2 360 ֏

от 9 шт. — 2 200 ֏

от 18 шт. — 2 120 ֏

Добавить в корзину 1 шт. на сумму 2 760 ֏

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Номенклатурный номер: 8129492262

Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы

Биполярный транзистор IGBT, 650 В, 120 А, 469Вт

Корпус	TO-247
Brand	STMicroelectronics
Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.6 V
Configuration	Single
Continuous Collector Current at 25 C	120 A
Continuous Collector Current Ic Max	80 A
Factory Pack Quantity	600
Gate-Emitter Leakage Current	250 nA
Manufacturer	STMicroelectronics
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	469 W
Product Category	IGBT Transistors
RoHS	Details
Series	600-650V IGBTs
Technology	Si
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	120 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	469 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Case	TO247-3
Collector current	80A
Collector-emitter voltage	650V
Features of semiconductor devices	integrated anti-parallel diode
Gate charge	414nC
Gate-emitter voltage	±20V
Kind of package	tube
Mounting	THT
Power dissipation	470W
Pulsed collector current	300A
Type of transistor	IGBT
Вес, г	8.5