STD15NF10T4, Транзистор полевой MOSFET N-канальный 100В 23А 70Вт
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2139 шт. с центрального склада, срок 3 недели
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 100В 23А 70Вт
Технические параметры
| Корпус | dpak | |
| Brand | STMicroelectronics | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 2500 | |
| Fall Time | 17 ns | |
| Forward Transconductance - Min | 12 S | |
| Height | 2.4 mm | |
| Id - Continuous Drain Current | 23 A | |
| Length | 6.6 mm | |
| Manufacturer | STMicroelectronics | |
| Maximum Operating Temperature | +175 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-252-3 | |
| Packaging | Reel | |
| Pd - Power Dissipation | 70 W | |
| Product Category | MOSFET | |
| Rds On - Drain-Source Resistance | 65 mOhms | |
| Rise Time | 45 ns | |
| RoHS | Details | |
| Series | STD15NF10 | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 49 ns | |
| Typical Turn-On Delay Time | 60 ns | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs - Gate-Source Voltage | 20 V | |
| Width | 6.2 mm | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 17 ns | |
| Forward Transconductance - Min: | 12 S | |
| Id - Continuous Drain Current: | 23 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +175 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-252-3 | |
| Pd - Power Dissipation: | 70 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 40 nC | |
| Rds On - Drain-Source Resistance: | 65 mOhms | |
| Rise Time: | 45 ns | |
| Series: | STD15NF10T4 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | STripFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 49 ns | |
| Typical Turn-On Delay Time: | 60 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Maximum Drain Source Voltage | 100 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 70 W | |
| Minimum Gate Threshold Voltage | 2V | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | DPAK(TO-252) | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Вес, г | 0.6 |
Техническая документация
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