STGD3NB60SDT4
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см. техническую документацию
см. техническую документацию
17 шт. с центрального склада, срок 3 недели
2 560 ֏
от 2 шт. —
2 120 ֏
от 5 шт. —
1 790 ֏
от 10 шт. —
1 670 ֏
1 шт.
на сумму 2 560 ֏
Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор БТИЗ, 600В 6A 48Вт TO252 Характеристики Категория | Транзистор |
Тип | БТИЗ |
Вид | IGBT |
Технические параметры
Brand | STMicroelectronics |
Collector- Emitter Voltage VCEO Max | 600 V |
Collector-Emitter Saturation Voltage | 1.5 V |
Configuration | Single |
Continuous Collector Current | 3 A |
Continuous Collector Current at 25 C | 6 A |
Continuous Collector Current Ic Max | 6 A |
Factory Pack Quantity | 2500 |
Gate-Emitter Leakage Current | +/-100 nA |
Height | 2.4 mm |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Gate Emitter Voltage | +/-20 V |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -65 C |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 48 W |
Product Category | IGBT Transistors |
RoHS | Details |
Series | STGD3NB60SD |
Unit Weight | 0.139332 oz |
Width | 6.2 mm |
Base Product Number | STGD3 -> |
Current - Collector (Ic) (Max) | 6A |
Current - Collector Pulsed (Icm) | 25A |
ECCN | EAR99 |
Gate Charge | 18nC |
HTSUS | 8541.29.0095 |
Input Type | Standard |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | 175В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Power - Max | 48W |
REACH Status | REACH Unaffected |
Reverse Recovery Time (trr) | 1.7Вµs |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | DPAK |
Switching Energy | 1.15mJ (off) |
Td (on/off) @ 25В°C | 125Вµs/- |
Test Condition | 480V, 3A, 1kOhm, 15V |
Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.5 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 6 A |
Continuous Collector Current Ic Max: | 6 A |
Continuous Collector Current: | 3 A |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Gate-Emitter Leakage Current: | +/-100 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package/Case: | TO-252-3 |
Pd - Power Dissipation: | 48 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Qualification: | AEC-Q101 |
REACH - SVHC: | Details |
Series: | STGD3NB60SD |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 0.6 |
Техническая документация
Datasheet
pdf, 308 КБ
Datasheet STGD3NB60SDT4
pdf, 307 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 7 августа1 | бесплатно |
HayPost | 11 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг