STP10NK80Z, Транзистор полевой MOSFET N-канальный 800В 9А 160Вт
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308 шт. с центрального склада, срок 3 недели
2 070 ֏
от 6 шт. —
1 760 ֏
от 12 шт. —
1 620 ֏
от 23 шт. —
1 560 ֏
1 шт.
на сумму 2 070 ֏
Альтернативные предложения2
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 800В 9А 160Вт
Технические параметры
Корпус | to-220 | |
Brand | STMicroelectronics | |
Channel Mode | Enhancement | |
Configuration | Single | |
Factory Pack Quantity | 1000 | |
Fall Time | 17 ns | |
Forward Transconductance - Min | 9.6 S | |
Height | 9.15 mm | |
Id - Continuous Drain Current | 9 A | |
Length | 10.4 mm | |
Manufacturer | STMicroelectronics | |
Maximum Operating Temperature | +150 C | |
Minimum Operating Temperature | -55 C | |
Mounting Style | Through Hole | |
Number of Channels | 1 Channel | |
Package / Case | TO-220-3 | |
Packaging | Tube | |
Pd - Power Dissipation | 160 W | |
Product Category | MOSFET | |
Qg - Gate Charge | 72 nC | |
Rds On - Drain-Source Resistance | 900 mOhms | |
Rise Time | 20 ns | |
RoHS | Details | |
Series | N-channel MDmesh | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Type | MOSFET | |
Typical Turn-Off Delay Time | 65 ns | |
Typical Turn-On Delay Time | 30 ns | |
Vds - Drain-Source Breakdown Voltage | 800 V | |
Vgs - Gate-Source Voltage | 30 V | |
Width | 4.6 mm | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Resistance | 900 mΩ | |
Maximum Drain Source Voltage | 800 V | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Gate Threshold Voltage | 4.5V | |
Maximum Power Dissipation | 160 W | |
Minimum Gate Threshold Voltage | 3V | |
Mounting Type | Through Hole | |
Number of Elements per Chip | 1 | |
Package Type | TO-220 | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
Automotive | No | |
ECCN (US) | EAR99 | |
Lead Shape | Through Hole | |
Maximum Continuous Drain Current (A) | 9 | |
Maximum Drain Source Resistance (MOhm) | 900@10V | |
Maximum Drain Source Voltage (V) | 800 | |
Maximum Gate Source Voltage (V) | ±30 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 160000 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Through Hole | |
Part Status | Active | |
PCB changed | 3 | |
PPAP | No | |
Process Technology | SuperMESH | |
Standard Package Name | TO | |
Supplier Package | TO-220AB | |
Supplier Temperature Grade | Industrial | |
Tab | Tab | |
Typical Fall Time (ns) | 17 | |
Typical Gate Charge @ 10V (nC) | 72 | |
Typical Gate Charge @ Vgs (nC) | 72@10V | |
Typical Input Capacitance @ Vds (pF) | 2180@25V | |
Typical Rise Time (ns) | 20 | |
Typical Turn-Off Delay Time (ns) | 65 | |
Typical Turn-On Delay Time (ns) | 30 | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
Fall Time: | 17 ns | |
Forward Transconductance - Min: | 9.6 S | |
Id - Continuous Drain Current: | 9 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | Through Hole | |
Number of Channels: | 1 Channel | |
Package/Case: | TO-220-3 | |
Packaging: | Tube | |
Pd - Power Dissipation: | 160 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 72 nC | |
Rds On - Drain-Source Resistance: | 900 mOhms | |
Rise Time: | 20 ns | |
Series: | STP10NK80Z | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | SuperMESH | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Type: | MOSFET | |
Typical Turn-Off Delay Time: | 65 ns | |
Typical Turn-On Delay Time: | 30 ns | |
Vds - Drain-Source Breakdown Voltage: | 800 V | |
Vgs - Gate-Source Voltage: | -30 V, +30 V | |
Vgs th - Gate-Source Threshold Voltage: | 3 V | |
Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 439 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 438 КБ
Datasheet
pdf, 424 КБ
Datasheet STP10NK80ZFP
pdf, 439 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 9 августа1 | бесплатно |
HayPost | 13 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг