STW12NK90Z, Транзистор полевой MOSFET N-канальный 900В 11А 230Вт
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5 шт. с центрального склада, срок 3 недели
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2 шт.
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 900В 11А 230Вт
Технические параметры
| Корпус | TO-247 | |
| Brand | STMicroelectronics | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 600 | |
| Fall Time | 55 ns | |
| Height | 20.15 mm | |
| Id - Continuous Drain Current | 11 A | |
| Length | 15.75 mm | |
| Manufacturer | STMicroelectronics | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | Through Hole | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-247-3 | |
| Packaging | Tube | |
| Pd - Power Dissipation | 230 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 113 nC | |
| Rds On - Drain-Source Resistance | 880 mOhms | |
| Rise Time | 20 ns | |
| RoHS | Details | |
| Series | N-channel MDmesh | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 88 ns | |
| Typical Turn-On Delay Time | 31 ns | |
| Vds - Drain-Source Breakdown Voltage | 900 V | |
| Vgs - Gate-Source Voltage | 30 V | |
| Width | 5.15 mm | |
| Case | TO247 | |
| Drain current | 11A | |
| Drain-source voltage | 900V | |
| Features of semiconductor devices | ESD protected gate | |
| Gate-source voltage | ±30V | |
| Kind of channel | enhanced | |
| Kind of package | tube | |
| Mounting | THT | |
| On-state resistance | 880mΩ | |
| Polarisation | unipolar | |
| Power dissipation | 230W | |
| Type of transistor | N-MOSFET | |
| Continuous Drain Current (Id) | 11A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 880mΩ@10V, 5.5A | |
| Drain Source Voltage (Vdss) | 900V | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@100uA | |
| Input Capacitance (Ciss@Vds) | 3.5nF@25V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Power Dissipation (Pd) | 230W | |
| Total Gate Charge (Qg@Vgs) | 152nC@10V | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: | 600 | |
| Fall Time: | 55 ns | |
| Id - Continuous Drain Current: | 11 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package/Case: | TO-247-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 230 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 113 nC | |
| Rds On - Drain-Source Resistance: | 880 mOhms | |
| Rise Time: | 20 ns | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 88 ns | |
| Typical Turn-On Delay Time: | 31 ns | |
| Vds - Drain-Source Breakdown Voltage: | 900 V | |
| Vgs - Gate-Source Voltage: | -30 V, +30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Resistance | 880 mΩ | |
| Maximum Drain Source Voltage | 900 V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Maximum Power Dissipation | 230 W | |
| Minimum Gate Threshold Voltage | 3V | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 113 nC @ 10 V | |
| Вес, г | 7.5 |
Техническая документация
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Сроки доставки
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