STP6NK90Z, Транзистор полевой MOSFET N-канальный 900В 5.8А 140Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 900В 5.8А 140Вт
Технические параметры
Корпус | TO-220AB | |
кол-во в упаковке | 50 | |
Channel Mode | Enhancement | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.8 A | |
Maximum Drain Source Resistance | 2 Ω | |
Maximum Drain Source Voltage | 900 V | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Gate Threshold Voltage | 4.5V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 140 W | |
Minimum Gate Threshold Voltage | 3V | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Through Hole | |
Number of Elements per Chip | 1 | |
Package Type | TO-220 | |
Pin Count | 3 | |
Series | MDmesh, SuperMESH | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 46.5 nC @ 10 V | |
Width | 4.6mm | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
Fall Time: | 20 ns | |
Forward Transconductance - Min: | 5 S | |
Id - Continuous Drain Current: | 5.8 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | Through Hole | |
Number of Channels: | 1 Channel | |
Package/Case: | TO-220-3 | |
Packaging: | Tube | |
Pd - Power Dissipation: | 140 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 46.5 nC | |
Rds On - Drain-Source Resistance: | 2 Ohms | |
Rise Time: | 45 ns | |
Series: | STP6NK90Z | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | SuperMESH | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel Power MOSFET | |
Type: | MOSFET | |
Typical Turn-Off Delay Time: | 20 ns | |
Typical Turn-On Delay Time: | 17 ns | |
Vds - Drain-Source Breakdown Voltage: | 900 V | |
Vgs - Gate-Source Voltage: | -30 V, +30 V | |
Vgs th - Gate-Source Threshold Voltage: | 3 V | |
Case | TO220-3 | |
Drain current | 3.65A | |
Drain-source voltage | 900V | |
Features of semiconductor devices | ESD protected gate | |
Gate-source voltage | ±30V | |
Kind of channel | enhanced | |
Kind of package | tube | |
Manufacturer | STMicroelectronics | |
Mounting | THT | |
On-state resistance | 2Ω | |
Polarisation | unipolar | |
Power dissipation | 140W | |
Technology | SuperMesh™ | |
Type of transistor | N-MOSFET | |
Brand | STMicroelectronics | |
Configuration | Single | |
Factory Pack Quantity | 1000 | |
Fall Time | 20 ns | |
Forward Transconductance - Min | 5 S | |
Height | 9.15 mm | |
Id - Continuous Drain Current | 5.8 A | |
Length | 10.4 mm | |
Mounting Style | Through Hole | |
Number of Channels | 1 Channel | |
Package / Case | TO-220-3 | |
Packaging | Tube | |
Pd - Power Dissipation | 140 W | |
Product Category | MOSFET | |
Qg - Gate Charge | 46.5 nC | |
Rds On - Drain-Source Resistance | 2 Ohms | |
Rise Time | 45 ns | |
RoHS | Details | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Type | MOSFET | |
Typical Turn-Off Delay Time | 20 ns | |
Typical Turn-On Delay Time | 17 ns | |
Vds - Drain-Source Breakdown Voltage | 900 V | |
Vgs - Gate-Source Voltage | 30 V | |
Вес, г | 3.5 |
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